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| Datasheet File OCR Text: |
| NTE186 (NPN) & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and many other general purpose applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation, PT TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case for 10sec max), TL . . . . . . . . . . . . . . . +260C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter DC Current Gain Symbol hFE VCE(sat) VBE(sat) ICES IEBO Ccbo fT td tr ts tf Test Conditions VCE = 1V, IC = 200mA VCE = 1V, IC = 2A Collector Saturation Voltage Base Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Collector Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time IC = 1A, IB = 50mA IC = 1A, IB = 100mA VCE = 70V, TJ = +25C VEB = 5V, TJ = +25C VCB = 10V, f = 1MHz VCE = 4V, IC = 20mA IC = 1A, IB1 = IB2 = 100mA Min 100 20 - - - - - - - - - 75 Typ - - - - - - - 50 100 100 500 - Max 220 - 0.5 1.3 10 100 100 - - - - - V V A A pF MHz ns ns ns ns Unit .380 (9.56) .180 (4.57) C .132 (3.35) Dia .500 (12.7) 1.200 (30.48) Ref .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min B C E .100 (2.54) .100 (2.54) |
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